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Smart Investors Daily
IF

OTC · IFNNY

Infineon Technologies AG

Technology · Semiconductors

$56.35

Down-$4.22 (-6.97%)

Updated Nov 1, 2026, 4:33 AM

SID Score

5.3/10

Composite research score

Smart Money

54/100

Neutral

Market cap
56.24B
P/E ratio
46.28
Dividend yield
0.65%
52-week range
— – —
Volume
32.54K
Avg. volume
259.44K

Price performance · IFNNY

IFNNY price history

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IFNNY research

Overview

Company profile and research snapshot.

Company profile

INFINEON TECHS AG S/ADR

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Analyst outlook

Consensus and target data currently published for this company.

Consensus
Buy
Average target
$43.50
Implied upside
—
Analysts
16
IFNNY recent ratings
DateFirmRatingTarget
Sep 21, 2026DAY BY DAYBuy—
Sep 21, 2026METZLER EQUITIESBuy—
Sep 21, 2026BERENBERGBuy—
Sep 7, 2026BNP PARIBASOutperform—
Sep 7, 2026WARBURG RESEARCH GMBHBuy—
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Yahoo · Oct 28, 2026

ASIC - Global Strategic Business Report: Capture a $6.2 Billion Revenue Shift Through 2032 as AMD, Broadcom, Intel, Infineon, and Analog Devices Accelerate AI, 5G, and Automotive Chips

Target high-ROI ASIC opportunities in AI, 5G, autonomous vehicles and energy-efficient devices with actionable segment, regional and competitive insightsDublin, Oct. 28, 2026 (GLOBE NEWSWIRE) -- "ASIC - Global Strategic Business Report" has been added to ResearchAndMarkets.com's offering. The global Application-Specific Integrated Circuit (ASIC) market was valued at US$19.1 billion in 2025 and is projected to reach US$25.3 billion by 2032, expanding at a compound annual growth rate (CAGR) of 4.1

Yahoo · Oct 26, 2026

Enphase Energy and Infineon Announce World’s First 900 V GaN Bidirectional Switch Devices for AI Data Center Solid-State Transformers

FREMONT, Calif., Oct. 26, 2026 (GLOBE NEWSWIRE) -- Enphase Energy, Inc. (NASDAQ: ENPH), a global energy technology company, and Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced that Enphase will deploy the world’s first 900 V gallium nitride (GaN) monolithic bidirectional switch (BDS) devices, designed to operate in Enphase solid-state transformer power modules. The devices extend GaN technology to 900 V while retaining the high-frequency switching capabilities that enable comp

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